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Tesla’s SiC goal fuels discussions of GaN takeover and IGBT revival

With Tesla’s recent announcement to cut the use of silicon carbide (SiC) by 75%, some see it as an opportunity for gallium nitride (GaN) to boost its presence in vehicle power electronics. To date, the yield of crystal growth has been a major challenge faced by the SiC industry, and the process accounts for 30% of the total cost of SiC MOSFET.