ProLogium Technology said it has signed a joint testing agreement with Mercedes-Benz, giving the automaker priority access to evaluate the battery maker’s latest Gen4 cells. The companies said the work will build on nearly a decade of collaboration focused on next-generation mobility battery technology.

Confidential details of Anthropic’s initial public offering (IPO) prospectus, reviewed by Reuters, reveal an enterprise operating at an unprecedented scale and making a historic wager that artificial intelligence will transform the global economy far more profoundly than industrialization, electricity, or the internet. To capture that future, the startup is targeting a public valuation of more than US$2 trillion.

China’s ChangXin Memory Technologies (CXMT) plans to invest CNY34.9 billion (approx. US$5.2 billion) in technology R&D and additional back-end DRAM testing capacity, stepping up investment as tight memory supply and stronger pricing give the company more room to expand.

Saimemory, a SoftBank subsidiary, has brought Shinko Electric Industries into its effort to commercialize Z-Angle Memory (ZAM), adding packaging-substrate, high-density integration and manufacturing expertise to a next-generation memory project that already includes Intel and Japan’s RIKEN.

Amid the ongoing restructuring of the global semiconductor supply chain, Singapore is focusing on advanced packaging, heterogeneous integration, silicon photonics, and optical interconnects, aiming to leverage nearly six decades’ worth of manufacturing and supply chain expertise. In contrast with industry players in Taiwan, South Korea, and the US, who have continued to pour resources into 2nm and 1.4nm advanced processes, Singapore’s semiconductor firms see no need to replicate Taiwan’s foundry model. Instead, they aim to harness Singapore’s existing strengths in mature and specialty processes, assembly and testing, equipment, materials, and multinational R&D clusters to secure their foothold in the supply chain for next-gen semiconductors.

Samsung Electronics is reshaping its next-generation dynamic random-access memory (DRAM) roadmap, elevating its B1b wafer-to-wafer (W2W) hybrid bonding technology from a project-specific development to the core technology behind D0a, its first sub-10nm DRAM generation. Industry observers believe Samsung’s push to commercialize B1b DRAM earlier could also benefit its next-generation high-bandwidth memory (HBM) products, including HBM5.