China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world’s first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material with high electron mobility, and the debut of China’s first 100nm GaN process design kit (PDK) for chip fabrication.