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Hon Hai Research Institute invests in ultra-wide bandgap semiconductor development

The Semiconductor Research Center at the Hon Hai Research Institute (HHRI), together with National Yang Ming Chiao Tung University (NYMCTU) in Taiwan and the University of Texas at Austin in the US have invested in forward-looking research on beta-gallium oxide (β-Ga2O3) ultra-wide bandgap (UWBG) semiconductors, which has led to significant breakthroughs in the satellite communications and high-power component sectors.