Samsung and SK Hynix reportedly accelerate VCT DRAM development as stepping stone to 3D DRAM

Samsung and SK Hynix are advancing vertical channel transistor (VCT) technology through 4F² DRAM prototypes as a transitional step toward 3D DRAM, while Micron is bypassing VCT entirely to focus directly on true 3D DRAM development, signaling a strategic divergence in next-generation memory architectures.