Samsung Electronics is undertaking one of its most significant DRAM expansions in years, aggressively scaling production of its next-generation 1c DRAM as intense global AI demand redefines the memory market. This major capacity increase is poised to reshape the competitive landscape and challenge SK Hynix, which has dominated the high-bandwidth memory (HBM) segment over the past two years.
Samsung ramps up 1c DRAM output in bid to regain edge in memory market
19
Nov