Intel has completed acceptance testing of the industry’s first commercial high-NA EUV lithography system with a numerical aperture of 0.55, the ASML Twinscan EXE:5200B, laying the foundation for mass production of its 14A process node. This milestone marks the transition of high-NA EUV technology from research and development verification to high-volume manufacturing (HVM), enabling wafer throughput of 175 per hour and reinforcing Intel’s efforts to reclaim leadership in advanced semiconductor processes.