The race to dominate next-generation NAND flash memory has long been measured in layers — and Samsung Electronics appears to be pulling ahead. The South Korean chipmaker has reportedly developed a 900-layer-class V-NAND prototype, a significant leap that brings the memory industry closer to the 1,000-layer threshold as chipmakers intensify efforts to pack more storage into smaller chips while cutting power consumption.
Samsung’s reported 900-layer V-NAND prototype puts NAND race with YMTC in focus
26
May