Efficient Power Conversion (EPC), a company specializing in gallium nitride (GaN) semiconductor technology, announced on August 6 that the Beijing Intellectual Property Court dismissed an appeal filed by Innoscience (Suzhou). The ruling reaffirmed the validity of EPC’s Chinese patent ZL201080015425.X, related to the “Compensated gate MISFET and its manufacturing method,” a key patent in enhancement-mode GaN field-effect transistors (FETs).