US$37 billion on the line: Samsung’s delayed Taylor fab nears critical juncture

Samsung Electronics is moving forward with plans to launch operations at its advanced semiconductor fab in Taylor, Texas, by late 2026, after multiple delays stemming from both internal complications and external factors. Analysts caution that additional delays could intensify financial pressure and threaten Samsung’s access to tax breaks and federal subsidies linked to the Taylor project.

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Turvo commits to combustion engine parts for Bosch amid expanding EV footprint

Taiwan-based precision metal parts manufacturer Turvo International recently hosted a media tour, during which Chairman Tony Liu highlighted the company’s ongoing transformation in response to shifting industry trends. The company has actively expanded into the new energy vehicle (NEV) market while maintaining a strong and stable partnership with global Tier 1 supplier Bosch through a distinctive strategic collaboration model.

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Samsung lifts HBM yield as US tariffs loom over China-made chips

South Korean media have reported that Samsung Electronics has made notable progress in developing next-generation high-bandwidth memory (HBM). According to Chosun Biz, the company recently surpassed a test production yield of 40% for the logic die, produced using Samsung’s 4nm foundry process, a marked improvement over Baidu’s 15-19% yield for chips manufactured using the same technology.

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Hon Hai Research Institute invests in ultra-wide bandgap semiconductor development

The Semiconductor Research Center at the Hon Hai Research Institute (HHRI), together with National Yang Ming Chiao Tung University (NYMCTU) in Taiwan and the University of Texas at Austin in the US have invested in forward-looking research on beta-gallium oxide (β-Ga2O3) ultra-wide bandgap (UWBG) semiconductors, which has led to significant breakthroughs in the satellite communications and high-power component sectors.

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