China’s Silan to establish 150mm wafer fab for SiC power devices
Silan Microelectronics, a Chinese IDM specialized in power semiconductor, has announced plans to invest a total of CNY1.5 billion (US$222.2 million) to establish a 150mm wafer fabrication line for silicon carbide (SiC) MOSFET and other power devices. When completed, the facility is expected to produce 144,000 wafers per year.