Onsemi and Innoscience have signed a memorandum of understanding to assess opportunities for expanding the manufacturing of gallium nitride (GaN) power devices, with a focus on accelerating deployment in the 40–200V segment. The companies said the non-binding agreement aims to combine Onsemi’s packaging, drivers, and system-integration capabilities with Innoscience’s 8-inch GaN-on-silicon wafer technology and high-volume production capacity.