Samsung Electronics is preparing a major push to reclaim ground in the high-bandwidth memory (HBM) market, where it has lagged behind SK Hynix and Micron. Its sixth-generation 1c DRAM, built for HBM4, has reportedly hit a critical production milestone, positioning the company for mass deployment and a broader DRAM strategy reboot.
Samsung reportedly cracks 1c DRAM yield hurdle, positions HBM4 for AI rebound
21
Jul