Samsung Electronics is reshaping its next-generation dynamic random-access memory (DRAM) roadmap, elevating its B1b wafer-to-wafer (W2W) hybrid bonding technology from a project-specific development to the core technology behind D0a, its first sub-10nm DRAM generation. Industry observers believe Samsung’s push to commercialize B1b DRAM earlier could also benefit its next-generation high-bandwidth memory (HBM) products, including HBM5.