Samsung Electronics is accelerating its push to reclaim semiconductor leadership, spotlighting its latest breakthrough in sixth-generation DRAM (1c node) yields. The development is fueling optimism about a potential rebound in the HBM market. Spearheading this turnaround is Jun Young-hyun, CEO and head of the Device Solutions (DS) division, who returned in May 2024 and initiated a high-stakes redesign of Samsung’s DRAM architecture to reverse recent setbacks.