Toshiba’s semiconductor and electronic components subsidiary, Toshiba Electronic Devices & Storage, has reached a basic agreement with China’s silicon carbide (SiC) wafer manufacturer SICC for improving SiC wafer quality and technical cooperation. The two parties will also explore the possibility of expanding SiC wafer supply in the future and continue negotiating specific collaboration details.
Toshiba and SICC collaborate on SiC technology; alliance with Rohm faces bottlenecks
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Aug