Ennostar, Taiwan’s largest LED manufacturer, said it has entered a strategic partnership with the German epitaxy specialist Allos Semiconductors to bring 8-inch gallium nitride–on–silicon (GaN-on-Si) LED epitaxial wafers into mass production. The collaboration is aimed at accelerating the adoption of microLED displays in highly integrated applications such as augmented reality, while laying the groundwork for a future transition to 12-inch GaN-on-Si technology.
High-Bandwidth Flash (HBF) is likely to reach commercialization sooner than previously expected and could become a key technology supporting large-scale data training and real-time inference, said Joungho Kim, professor of electrical engineering at the Korea Advanced Institute of Science and Technology.
As AI chip package sizes continue to grow, warpage issues in IC substrates have become more pronounced. Capacity constraints for low-CTE fiberglass cloth, a critical material used to address warpage, are forcing end customers, including Apple, Nvidia, Google, and AWS, into increasingly intense competition for supply, industry sources said.
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