InnoScience wins GaN patent battle against Infineon in China

InnoScience Technology, a leading China-based integrated device manufacturer (IDM) in gallium nitride (GaN), has won a sweeping victory in the latest patent ruling against global power component leader Infineon in China. Supply-chain sources said the two sides’ GaN patent fight has stretched from the US and Germany to China, and the ruling makes it even harder for Infineon within China’s increasingly cutthroat market.

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ASML, TSMC, and imec move 2D transistors closer to manufacturing reality

ASML, TSMC, and imec have demonstrated a major advance in the effort to bring two-dimensional (2D) semiconductor materials from research laboratories into high-volume semiconductor manufacturing. At the 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits, the partners unveiled a 300mm wafer integration flow that produced both n-type and p-type 2D-material transistors at a 50nm contacted poly pitch (CPP), marking the first time such scaled devices have been demonstrated using an industry-compatible process.

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